MBE
(molecular beam epitaxy) techniques allow the epitaxial growth of different compounds. One of the
model materials for optoelectronics are epitaxial layers of III-V semiconductors, mainly GaAs and related compounds. The controlled growth of
single crystalline layers on an atomic scale makes it possible to design
new materials with optimized electrical and optical characteristics.
The
modular GEN II solid source MBE machine in our cleanroom
is a system specially designed for high quality growth of III-V materials.
8 different sources can be used to grow AlAs, InAs, GaAs and any terniary compound (AlGaAs, InGaAs, InAlAs) with
different doping concentrations. Insitu RHEED
measurements are used to monitor surface conditions and growth rate.
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For
further information on our research activity in MBE growth please contact
Gottfried Strasser:
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mail | tel ++43 1 58801 36218
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What
is it good for?
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